Thermoelectric properties of Bi-doped Mg2Si1-x Sn x prepared by mechanical alloying

被引：6
|
作者：
You, Sin-Wook [1 ]
Kim, Il-Ho [1 ]
Choi, Soon-Mok [2 ]
Seo, Won-Seon [3 ]
机构：
[1] Korea Natl Univ Transportat, Dept Mat Sci & Engn, Chungju 380702, South Korea
[2] Korea Univ Technol & Educ, Sch Energy Mat & Chem Engn, Cheonan 330708, Chungnam, South Korea
[3] Korea Inst Ceram Engn & Technol, Energy & Environm Mat Div, Seoul 153801, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 63卷 / 11期
关键词：
Thermoelectric; Mg-2(Si; Sn); Solid solution; Mechanical alloying;
D O I：
10.3938/jkps.63.2153
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Bi-doped Mg2Si1-x Sn (x) solid solutions were prepared by mechanical alloying and hot pressing. The lattice constant increased and the electrical conduction behavior changed from n-type to p-type with increasing Sn content. The electrical conductivity increased with increasing Sn content at a specific temperature. Bi-doped Mg2Si1-x Sn (x) solid solutions showed n-type conduction, and the carrier concentration was increased because of doped Bi acting as donors. The absolute value of the Seebeck coefficient decreased with increasing temperature. The lowest thermal conductivity of 1.3-1.5 W/mK was obtained by Bi doping. Mg2Si0.7Sn0.3:Bi-0.01 exhibited a maximum figure of merit (ZT) of 0.65 at 823 K.
引用
收藏
页码：2153 / 2157
页数：5
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