Silicon nitride as dielectric in the low temperature SiGe HBT processing

被引：0
|
作者：
Ren, QW
Nanver, LK
deBoer, CR
vanZeijl, HW
机构：
[1] DIMES IC Process Research Sector, Delft University of Technology, 2600 Delft
来源：
MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(97)00043-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-stress silicon-rich SiNx deposited at or below 700 degrees C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700 degrees C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.
引用
收藏
页码：179 / 182
页数：4
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