Cathodoluminescence and Current LTS of MOVPE-Grown ZnCdS/ZnSSe SQW Structures

被引：2
|
作者：
Kozlovsky, V. I. [1 ]
Sannikov, D. A. [1 ]
Litvinov, V. G. [2 ]
机构：
[1] PN Lebedev Phys Inst, Moscow 119991, Russia
[2] Ryazan State Radioengn Univ, Ryazan 390005, Russia
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期
关键词：
Quantum well; Band offset; ZnCdS/ZnSSe II-type heterostructure;
D O I：
10.3938/jkps.53.2864
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
ZnCdS/ZnSSe SQW structures grown by using metal-organic vapor-phase epitaxy (MOVPE) were investigated. Based on current deep level transient spectroscopy (CDLTS) and cathodoluminescence (CL) data, we estimated the conduction band offset on the ZnCdS/ZnSSe interface.
引用
收藏
页码：2864 / 2866
页数：3
相关论文
共 26 条
  • [21] Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
    Miyoshi, Makoto
    Egawa, Takashi
    Ishikawa, Hiroyasu
    SOLID-STATE ELECTRONICS, 2006, 50 (9-10) : 1515 - 1521
  • [22] Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate
    K. Yasuda
    M. Niraula
    N. Fujimura
    T. Tachi
    H. Inuzuka
    S. Namba
    S. Muramatsu
    T. Kondo
    Y. Agata
    Journal of Electronic Materials, 2012, 41 : 2754 - 2758
  • [23] Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate
    Yasuda, K.
    Niraula, M.
    Fujimura, N.
    Tachi, T.
    Inuzuka, H.
    Namba, S.
    Muramatsu, S.
    Kondo, T.
    Agata, Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (10) : 2754 - 2758
  • [24] Influence of strain-compensating and strainmediating layers on the optical properties of MOVPE-grown GalnNAs single quantum-well structures
    Sun, HD
    Clark, AH
    Calvez, S
    Dawson, MD
    Kim, KS
    Kim, T
    Park, YJ
    2005 International Conference on Indium Phosphide and Related Materials, 2005, : 237 - 238
  • [25] Non-destructive mapping of doping and structural composition of MOVPE-grown high current density resonant tunnelling diodes through photoluminescence spectroscopy
    Jacobs, K. J. P.
    Stevens, B. J.
    Mukai, T.
    Ohnishi, D.
    Hogg, R. A.
    JOURNAL OF CRYSTAL GROWTH, 2015, 418 : 102 - 110
  • [26] Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy
    Bhattacharya, A
    Nasarek, M
    Zeimer, U
    Klein, A
    Zorn, M
    Bugge, F
    Gramlich, S
    Weyers, M
    JOURNAL OF CRYSTAL GROWTH, 2005, 274 (3-4) : 331 - 338
123