Cathodoluminescence and Current LTS of MOVPE-Grown ZnCdS/ZnSSe SQW Structures

被引：2
|
作者：
Kozlovsky, V. I. [1 ]
Sannikov, D. A. [1 ]
Litvinov, V. G. [2 ]
机构：
[1] PN Lebedev Phys Inst, Moscow 119991, Russia
[2] Ryazan State Radioengn Univ, Ryazan 390005, Russia
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期
关键词：
Quantum well; Band offset; ZnCdS/ZnSSe II-type heterostructure;
D O I：
10.3938/jkps.53.2864
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
ZnCdS/ZnSSe SQW structures grown by using metal-organic vapor-phase epitaxy (MOVPE) were investigated. Based on current deep level transient spectroscopy (CDLTS) and cathodoluminescence (CL) data, we estimated the conduction band offset on the ZnCdS/ZnSSe interface.
引用
收藏
页码：2864 / 2866
页数：3
相关论文
共 26 条
  • [1] MOVPE-grown ZnSe/ZnSSe structures for blue VCSEL with resonant periodic gain
    Korostelin, YV
    Kozlovsky, VI
    Kuznetsov, PI
    Landman, AI
    Sannikov, DA
    Tiberi, MD
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04): : 900 - +
  • [2] Study of MOVPE-grown InGaN/GaN heterostructures by cathodoluminescence
    Liu, Q
    Lakner, H
    Haase, M
    Scholz, F
    Sohmer, A
    Kubalek, E
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 91 - 94
  • [3] Photo- and cathodoluminescence of ZnSSe quantum well heterostructures grown by MOVPE
    Gurskii, AL
    Lutsenko, EV
    Yablonskii, GP
    Kozlovsky, VI
    Krysa, AB
    Sollner, J
    Scholl, M
    Hamadeh, H
    Heuken, M
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 518 - 522
  • [4] Studies on structural and electro-optical properties of MOVPE-grown ZnMgSSe by cathodoluminescence
    Liu, Q
    Brockt, G
    Meinert, A
    Kalisch, H
    Heuken, M
    Lakner, H
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 139 - 143
  • [5] Hexagonal ZnCdS epilayers and CdSSe/ZnCdS QW structures on CdS(0001) and ZnCdS(0001) substrates grown by MOVPE
    Kuznetsov, PI
    Jitov, VA
    Yakushcheva, GG
    Shchamkhalova, BS
    Zakharov, LY
    Kozlovsky, VI
    Skasyrsky, YK
    O'Donnell, KP
    Trager-Cowan, C
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 516 - 517
  • [6] Arsenic Diffusion in MOVPE-Grown GaAs/Ge Epitaxial Structures
    Orejuela, V.
    Rey-Stolle, I.
    Garcia, I.
    Garcia-Tabares, E.
    ADVANCED ELECTRONIC MATERIALS, 2024, 10 (09):
  • [7] CATHODOLUMINESCENCE OF MOVPE-GROWN GAN LAYER ON ALPHA-AL2O3
    HIRAMATSU, K
    AMANO, H
    AKASAKI, I
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 375 - 380
  • [8] CHARACTERIZATION OF MOVPE-GROWN ALGAAS/GAAS RESONANT TUNNELING STRUCTURES
    SCHNELL, RD
    TEWS, H
    NEUMANN, R
    MITWALSKY, A
    TREICHLER, R
    PACKEISER, G
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 825 - 830
  • [9] Characterisation of MOVPE-grown AlGaAs/GaAs resonant tunneling structures
    1600, (Publ by Inst of Physics Publ Ltd, Bristol, Engl):
  • [10] ZnSe/ZnMgSSe QW structures grown by MOVPE on transparent ZnSSe substrates
    Krysa, AB
    Korostelin, YV
    Kozlovsky, VI
    Shapkin, PV
    Kalisch, H
    Rüland, R
    Heuken, M
    Heime, K
    MICROELECTRONIC ENGINEERING, 2000, 51-2 : 19 - 26
123