Indentation-induced phase transformations in silicon as a function of history of unloading

被引:2
|
作者
Fujisawa, N. [1 ]
Keikotlhaile, R. T. [1 ]
Bradby, J. E. [1 ]
Williams, J. S. [1 ]
机构
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
基金
澳大利亚研究理事会;
关键词
D O I
10.1557/JMR.2008.0322
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A crystalline silicon surface, loaded by a Berkovich indenter to a constant maximum load, was unloaded using three unload functions, each consisting of five linear segments of equal time period. The first function had an exponentially decaying unload rate and was found to promote a pop-out event more readily than the second function, having a linear unload rate, or the third case with its unload rate increasing with time. Statistical analyses of experimental data suggest that the unload rate within 20%-30% of the maximum load, when the mean contact pressure in the indent volume is roughly 5 to 6 GPa, is the most dominant factor influencing the probabilistic occurrence of a pop-out event. Unload rates at higher load levels were shown to have a much less significant effect on the probability of pop-out occurrence.
引用
收藏
页码:2645 / 2649
页数:5
相关论文
共 50 条
  • [31] Phase transformations induced by spherical indentation in ion-implanted amorphous silicon
    Haberl, B.
    Bradby, J. E.
    Ruffell, S.
    Williams, J. S.
    Munroe, P.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)
  • [32] Phase transformations induced by spherical indentation in ion-implanted amorphous silicon
    Haberl, B.
    Bradby, J.E.
    Ruffell, S.
    Williams, J.S.
    Munroe, P.
    Journal of Applied Physics, 2006, 100 (01):
  • [33] Site-controlled fabrication of silicon nanotips by indentation-induced selective etching
    Jin, Chenning
    Yu, Bingjun
    Liu, Xiaoxiao
    Xiao, Chen
    Wang, Hongbo
    Jiang, Shulan
    Wu, Jiang
    Liu, Huiyun
    Qian, Linmao
    APPLIED SURFACE SCIENCE, 2017, 425 : 227 - 232
  • [34] Indentation-induced crystallization in a metallic glass
    Yan Zhi-Jie
    Li Jin-Fu
    Zhou Yao-He
    Wu Yan-Qing
    ACTA PHYSICA SINICA, 2007, 56 (02) : 999 - 1003
  • [35] Indentation-induced debonding of ductile films
    Volinsky, AA
    Clift, WM
    Moody, NR
    Gerberich, WW
    INTERFACIAL ENGINEERING FOR OPTIMIZED PROPERTIES II, 2000, 586 : 255 - 260
  • [36] Indentation-induced subsurface damage in silicon particles of Al-Si alloys
    Bhattacharya, S.
    Riahi, A. R.
    Alpas, A. T.
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2009, 527 (1-2): : 387 - 396
  • [37] Indentation-induced damage in GaN epilayers
    Bradby, JE
    Kucheyev, SO
    Williams, JS
    Wong-Leung, J
    Swain, MV
    Munroe, P
    Li, G
    Phillips, MR
    APPLIED PHYSICS LETTERS, 2002, 80 (03) : 383 - 385
  • [38] Indentation-induced deformation at ultramicroscopic and macroscopic contacts
    Jeremy Thurn
    Robert F. Cook
    Journal of Materials Research, 2004, 19 : 124 - 130
  • [39] Indentation-induced selective growth of carbon nanotubes
    Yasui, Takanari
    Nishimura, Seigo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (29-32): : L800 - L803
  • [40] Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon
    Domnich, V
    Gogotsi, Y
    Dub, S
    APPLIED PHYSICS LETTERS, 2000, 76 (16) : 2214 - 2216