Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

被引：4

作者：

Lee, Keanchuan ^{[1
]}

Weis, Martin ^{[2
]}

Manaka, Takaaki ^{[1
]}

Iwamoto, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81219, Slovakia

来源：

AIP ADVANCES | 2012年 / 2卷 / 02期

基金：

日本学术振兴会;

关键词：

THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; CONTACT RESISTANCE; TRANSPORT; TRAPS;

D O I：

10.1063/1.4720399

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A silver nanoparticles self-assembled monolayer (SAM) was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I - V) and impedance spectroscopy (IS) measurements. The I - V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4720399]

引用

页数：8

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