X-ray acoustic topography of defects in Si crystals

被引:2
|
作者
Fodchuk, I [1 ]
Novikov, S [1 ]
Fedortsov, D [1 ]
机构
[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
关键词
D O I
10.1002/pssa.200306764
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of an ultrasonic transverse wave on the formation of microdefects and dislocation diffraction images on section topographs and on integral characteristics of real crystal structural imperfections is under investigation. An algorithm using the numerical solution of Takagi's equations is the theoretical basis of the present research. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:708 / 714
页数:7
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