Large magnetoresistance in post-annealed polycrystalline and epitaxial Bi thin films

被引：17
|
作者：
Cho, S [1 ]
Kim, Y
Olafsen, LJ
Vurgaftman, I
Freeman, AJ
Wong, GKL
Meyer, JR
Hoffmann, CA
Ketterson, JB
机构：
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[3] USN, Res Lab, Washington, DC 20375 USA
[4] HKUST, Dept Phys, Kowloon, Hong Kong, Peoples R China
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 239卷 / 1-3期
关键词：
bismuth; thin films; magnetoresistance; transport;
D O I：
10.1016/S0304-8853(01)00557-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have observed a large increase in the magnetoresistance (MR) of polycrystalline and epitaxial thin Bi films, which were subjected to a post-annealing procedure at 3degreesC below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at 5 K as compared with 343 for an as-grown epitaxial film due to enhanced carrier mobilities. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：201 / 203
页数：3
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