First principles study of transport properties of LaAlO3/SrTiO3 heterostructure with water adsorbates
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作者:
Lo, W. C.
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Hong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R China
Lo, W. C.
[1
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Au, Kit
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Hong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R China
Au, Kit
[1
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Chan, N. Y.
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Hong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R China
Chan, N. Y.
[1
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Huang, Haitao
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Hong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R China
Huang, Haitao
[1
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Lam, Chi-Hang
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Hong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R China
Lam, Chi-Hang
[1
]
Dai, J. Y.
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Hong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R China
Dai, J. Y.
[1
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[1] Hong Kong Polytech Univ, Dept Appl Phys, Shenzhen Res Inst, Kowloon, Hong Kong, Peoples R China
Tuning transport properties of two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface by surface modification is of great interest due to its rich physics and potential application in polar liquid or gas sensors. From first-principle calculations, we found that the adsorption of a thin layer of polar water molecules on the surface of LaAlO3 can remarkably enhance the carrier density of the interfacial 2DEG by over at least 50% which is qualitatively consistent with reported experimental result. This result sheds light on the charge coupling between surface polar molecules and interfacial 2DEG and suggests that sensor devices may be built using the hetero-oxide interfacial 2DEG. Crown Copyright (C) 2013 Published by Elsevier Ltd. All rights reserved.
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EO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
Inst Basic Sci IBS, Ctr Correlated Electron Syst, Seoul 08826, South Korea
Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaEO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
Yoo, Hyang Keun
Moreschini, Luca
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EO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USAEO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
Moreschini, Luca
Bostwick, Aaron
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EO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USAEO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
Bostwick, Aaron
Walter, Andrew L.
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EO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
Brookhaven Natl Lab, Photon Sci Directorate, NSLS 2, Upton, NY 11973 USAEO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
Walter, Andrew L.
Noh, Tae Won
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Inst Basic Sci IBS, Ctr Correlated Electron Syst, Seoul 08826, South Korea
Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South KoreaEO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
Noh, Tae Won
Rotenberg, Eli
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EO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USAEO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
Rotenberg, Eli
Chang, Young Jun
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Univ Seoul, Dept Phys, Seoul 02504, South Korea
Univ Seoul, Dept Smart Cities, Seoul 02504, South KoreaEO Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
机构:
Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
Gao, Haobin
Peng, Wei
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
Peng, Wei
Zhu, Xiaohong
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Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R ChinaSichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
Zhu, Xiaohong
Hu, Tao
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
Hu, Tao
Xie, Xiaoming
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
Xie, Xiaoming
Zhu, Jiliang
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Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R ChinaSichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
机构:
Natl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaNatl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Kumar, Abhishek
Husale, Sudhir
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Natl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaNatl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Husale, Sudhir
Dogra, Anjana
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Natl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaNatl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Dogra, Anjana
Gupta, Anurag
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Natl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaNatl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Gupta, Anurag
Aloysius, R. P.
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Natl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, IndiaNatl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
机构:
Korea Res Inst Stand & Sci, Taejon 305600, South Korea
Korea Univ, Dept Display & Semicond Phys, Sejong 339700, South KoreaKorea Res Inst Stand & Sci, Taejon 305600, South Korea
Chang, Jung-Won
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Song, Jonghyun
Lee, Joon Sung
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Korea Res Inst Stand & Sci, Taejon 305600, South Korea
Korea Univ, Dept Display & Semicond Phys, Sejong 339700, South KoreaKorea Res Inst Stand & Sci, Taejon 305600, South Korea
Lee, Joon Sung
Noh, Hyunho
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Korea Res Inst Stand & Sci, Taejon 305600, South KoreaKorea Res Inst Stand & Sci, Taejon 305600, South Korea
Noh, Hyunho
Seung, Sang Keun
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Chungnam Natl Univ, Dept Phys, Taejon 305764, South KoreaKorea Res Inst Stand & Sci, Taejon 305600, South Korea
Seung, Sang Keun
Baasandorj, Lkhagvasuren
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Korea Res Inst Stand & Sci, Taejon 305600, South Korea
Univ Sci & Technol, Taejon 305333, South KoreaKorea Res Inst Stand & Sci, Taejon 305600, South Korea
Baasandorj, Lkhagvasuren
Lee, Soon Gul
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Korea Univ, Dept Display & Semicond Phys, Sejong 339700, South KoreaKorea Res Inst Stand & Sci, Taejon 305600, South Korea
Lee, Soon Gul
Doh, Yong-Joo
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Korea Univ, Dept Display & Semicond Phys, Sejong 339700, South KoreaKorea Res Inst Stand & Sci, Taejon 305600, South Korea
Doh, Yong-Joo
Kim, Jinhee
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Korea Res Inst Stand & Sci, Taejon 305600, South KoreaKorea Res Inst Stand & Sci, Taejon 305600, South Korea