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Mott insulators in plaquettes
被引:3
|作者:
Martikainen, J. -P.
[1
]
机构:
[1] Aalto Univ, COMP Ctr Excellence, Dept Appl Phys, FI-00076 Aalto, Finland
来源:
基金:
芬兰科学院;
关键词:
QUANTUM;
MAGNETISM;
BOSONS;
D O I:
10.1103/PhysRevA.86.033630
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
We study small systems of strongly interacting ultracold atoms under the influence of gauge potentials and spin-orbit couplings. We use second-order perturbation theory in tunneling, derive an effective theory for the strongly correlated insulating states with one atom per site, and solve it exactly. We find dramatic changes in the level structure and in the amount of degeneracies expected. We also demonstrate the dynamical behavior as the barriers between plaquettes are gradually removed and find potentially high overlap with the resonating valence bond (RVB) state of the larger system.
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页数:6
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