Rapid thermal oxidation of porous silicon for surface passivation

被引：0
|
作者：
Debarge, L [1 ]
Stoquert, JP [1 ]
Slaoui, A [1 ]
Stalmans, L [1 ]
Poortmans, J [1 ]
机构：
[1] CNRS, PHASE, UPR 292, F-67037 Strasbourg, France
来源：
RAPID THERMAL PROCESSING | 1999年 / 84卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Rapid thermal oxidation with dry oxygen has been carried out on porous silicon (PS) films formed by electrochemical etching. The purpose of the paper was to investigate the surface passivation capability of the oxidized PS layers and to understand the oxidation mechanism. Rutherford back scattering (RBS) and X-ray photoemission spectroscopy (XPS) analyses confirmed the formation of a stoichiometric quasi-silicon dioxide. Besides, elastic recoil diffusion analysis (ERDA) demonstrated that a high concentration of hydrogen is still present in the PS film even after oxidation. RTO resulted in a good surface passivation effect at high temperature (>1000 degrees C) as seen by internal quantum efficiency analysis. However, lifetime in bulk silicon is affected by the RTO process. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码：281 / 285
页数：5
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