Investigation of interface in silicon-on-insulator by fractal analysis

被引：5

作者：

Liu, XH ^{[1
]}

Chen, J ^{[1
]}

Chen, M ^{[1
]}

Wang, X ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2002年 / 187卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

interface roughness; SIMOX; SOI; fractal;

D O I：

10.1016/S0169-4332(01)00827-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, RMS roughness values of the interface between top silicon and buried layer in SIMOX-SOI SIMOX, separation by implantation of oxygen; SOL silicon-on-insulator were directly measured by AFM. The results revealed that they were self-affine fractal, Based on the variation of the RMS values with scan sizes, the fractal dimensions and horizontal cutoffs of the fractal interfaces were calculated. It was found that the cutoff values varied with the different processes suggesting that the cutoff is sensitive to process and can be used to characterize the quality of SIMOX-SOI wafer. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：187 / 191

页数：5

共 50 条

[21] Silicon-on-insulator breakthrough
Erickson, J
DR DOBBS JOURNAL, 1998, 23 (10): : 16 - 16
[22] Strain effect in silicon-on-insulator materials: Investigation with optical phonons
Camassel, J
Falkovsky, LA
Planes, N
PHYSICAL REVIEW B, 2001, 63 (03)
[23] Crystallization of InSb phase near the bonding interface of silicon-on-insulator structure
Tyschenko, I. E.
Cherkov, A. G.
Voelskow, M.
Popov, V. P.
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, 2008, 131-133 : 137 - +
[24] Investigation on range distribution of Er ions implanted in silicon-on-insulator
Qin Xi-Feng
Ma Gui-Jie
Shi Shu-Hua
Wang Feng-Xiang
Fu Gang
Zhao Jin-Hua
ACTA PHYSICA SINICA, 2014, 63 (17)
[25] Modeling and experimental investigation of an integrated optical microheater in silicon-on-insulator
Kaushal, Saket
Das, Bijoy Krishna
APPLIED OPTICS, 2016, 55 (11) : 2837 - 2842
[26] Numerical Investigation of Photonic Crystal Microcavities in Silicon-on-Insulator Waveguides
Burger, Sven
Schmidt, Frank
Zschiedrich, Lin
PHOTONIC AND PHONONIC CRYSTAL MATERIALS AND DEVICES X, 2010, 7609
[27] Silicon photonics beyond silicon-on-insulator
Chiles, Jeff
Fathpour, Sasan
JOURNAL OF OPTICS, 2017, 19 (05)
[28] Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates
Chang, Ruey-Dar
Ma, Chia-Chi
Tsai, Jung-Ruey
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (06): : 1158 - 1163
[29] Interface states and deep-level centers in silicon-on-insulator structures
Antonova, IV
Stano, J
Nikolaev, DV
Naumova, OV
Popov, VP
Skuratov, VA
SEMICONDUCTORS, 2001, 35 (08) : 912 - 917
[30] A Novel Photodetector Based on the Interface Coupling Effect in Silicon-on-Insulator MOSFETs
Deng, J. N.
Shao, J. H.
Lu, B. R.
Chen, Y. F.
Zaslavsky, A.
Cristoloveanu, S.
Bawedin, M.
Wan, J.
2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,

← 1 2 3 4 5 →