Thermal expansion coefficients of β-Ga2O3 single crystals

被引：62

作者：

Orlandi, Fabio ^{[1
]}

Mezzadri, Francesco ^{[1
]}

Calestani, Gianluca ^{[1
]}

Boschi, Francesco ^{[2
]}

Fornari, Roberto ^{[2
]}

机构：

[1] Univ Parma, Dept Chem, I-43124 Parma, Italy

[2] Univ Parma, Dept Phys & Earth Sci, I-43124 Parma, Italy

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 11期

关键词：

VAPOR-PHASE EPITAXY; BETA-GALLIUM OXIDE; THIN-FILMS; GROWTH;

D O I：

10.7567/APEX.8.111101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice parameters of monoclinic beta-Ga2O3 were determined by powder diffraction in a wide temperature range. The experiments provide a quantitative evaluation of the thermal expansion of the unit cell. It was observed that the expansion of the monoclinic cell is not isotropic. These data are of great technological interest for the deposition of beta-Ga2O3 films on foreign substrates as well as for the deposition of different materials (such as GaN) on Ga2O3 substrates. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[41] Nano-structured phases of gallium oxide (GaOOH, α-Ga2O3, β-Ga2O3, γ-Ga2O3, δ-Ga2O3, and ε-Ga2O3): fabrication, structural, and electronic structure investigations
Aditya Sharma
Mayora Varshney
Himani Saraswat
Surekha Chaudhary
Jai Parkash
Hyun-Joon Shin
Keun-Hwa Chae
Sung-Ok Won
International Nano Letters, 2020, 10 : 71 - 79
[42] Oxygen and aluminum tracer diffusion in (-201) oriented β-Ga2O3 single crystals
Uhlendorf, Johanna
Schmidt, Harald
PHYSICAL REVIEW MATERIALS, 2023, 7 (09)
[43] Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals
Wang, Yan-shen
Zhu, Ming-zhi
Liu, Yuan
CHINA FOUNDRY, 2024, : 491 - 506
[44] Single crystals of β-Ga2O3, grown from the melt of gallium and aluminum oxides
Maslov, V.N., 1600, Institute for Problems in Mechanical Engineering, Russian Academy of Sciences (21):
[45] Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
Onuma, T.
Fujioka, S.
Yamaguchi, T.
Higashiwaki, M.
Sasaki, K.
Masui, T.
Honda, T.
APPLIED PHYSICS LETTERS, 2013, 103 (04)
[46] Degenerate doping in β-Ga2O3 single crystals through Hf-doping
Saleh, Muad
Varley, Joel B.
Jesenovec, Jani
Bhattacharyya, Arkka
Krishnamoorthy, Sriram
Swain, Santosh
Lynn, Kelvin
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (04)
[47] Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method
Ohba, Etsuko
Kobayashi, Takumi
Kado, Motohisa
Hoshikawa, Keigo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
[48] Floating zone technique growth of β-Ga2O3 single crystals and their optical properties
Zhang, Jun-Gang
Xia, Chang-Tai
Wu, Feng
Pei, Guang-Qing
Xu, Jun
Deng, Qun
Xu, Wu-Sheng
Shi, Hong-Sheng
Gongneng Cailiao/Journal of Functional Materials, 2006, 37 (03): : 358 - 360
[49] Surface properties of annealed semiconducting β-Ga2O3 (100) single crystals for epitaxy
Navarro-Quezada, A.
Galazka, Z.
Alame, S.
Skuridina, D.
Vogt, P.
Esser, N.
APPLIED SURFACE SCIENCE, 2015, 349 : 368 - 373
[50] Scintillation and optical properties of Sn-doped Ga2O3 single crystals
Usui, Yuki
Nakauchi, Daisuke
Kawano, Naoki
Okada, Go
Kawaguchi, Noriaki
Yanagida, Takayuki
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2018, 117 : 36 - 41

← 1 2 3 4 5 →