Ultra thin Tunnel Junction for Use in III-V Multijunction Solar Cells

被引：0

作者：

Bauhuis, G. J. ^{[1
]}

Mulder, P. ^{[1
]}

Haverkamp, E. J. ^{[1
]}

Schermer, J. J. ^{[1
]}

机构：

[1] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6524 AJ Nijmegen, Netherlands

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

III-V semiconductor materials; tunneling; photovoltaic cells; gallium arsenide;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In the ideal case, a III-V tunneljunction (TJ) used in a concentrator setup can handle high current, has a low resistance and does not absorb photons with an energy higher than the subcell(s) below it. In practice, TJs for concentrator systems are made of GaAs or AlGaAs with a low Al fraction, so absorption is present and causes an efficiency loss. Simulations show that in a standard 40 nm thick GaAs TJ the current density loss due to absorption is 1.7 mA/cm(2). This value can be reduced by replacing one of the GaAs layers by AlGaAs and/or using a thinner TJ. We have tested Al0.1GaAs/GaAs TJs with a total thickness of 17.5 nm. Two n-type dopants were investigated: Te and Si. For the p-type layer C was used. Excellent TJs with peak current densities above 600 A/cm(2) and a series resistance of 0.5 m Omega cm(2) were obtained. In this ultra thin TJ current density losses were reduced to 0.6 mA/cm(2).

引用

页码：909 / 912

页数：4

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