4x1-Si substrate atoms reconstruction in the Si(111)4x1-In structure

被引：5

作者：

Saranin, AA

Khramtsova, EA

Ignatovich, KV

Lifshits, VG

机构：

[1] Inst. Automat. and Contr. Processes, Far Eastern Branch, Russian Academy of Sciences, 690041 Vladivostok

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

atom-solid interactions; silicon; indium; hydrogen; surface structure; morphology; roughness; topography; auger electron spectroscopy; low energy electron diffraction (LEED);

D O I：

10.1016/S0169-4332(96)00839-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The room temperature interaction of atomic hydrogen with the Si(111)4 X 1-In surface phase was studied using low energy electron diffraction and Auger electron spectroscopy. It was found that the underlying atomic layer of a substrate of the Si(111)4 X 1-In surface phase has a reconstruction with the same periodicity as the In layer. Our experimental data evidently show that atomic hydrogen is a powerful tool for the investigation of the atomic structure of surface phases forming on the silicon surface.

引用

页码：440 / 444

页数：5

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