Topological transition in Bi1-xSbx studied as a function of Sb doping

被引：36

作者：

Nakamura, Fumitaka ^{[1
]}

Kousa, Yuka ^{[2
]}

Taskin, Alexey A. ^{[3
]}

Takeichi, Yasuo ^{[1
]}

Nishide, Akinori ^{[1
]}

Kakizaki, Akito ^{[1
]}

D'Angelo, Marie ^{[4
]}

Lefevre, Patrick ^{[5
]}

Bertran, Francois ^{[5
]}

Taleb-Ibrahimi, Amina ^{[5
]}

Komori, Fumio ^{[1
]}

Kimura, Shin-ichi ^{[6
]}

Kondo, Hiroshi ^{[2
]}

Ando, Yoichi ^{[3
]}

Matsuda, Iwao ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[2] Keio Univ, Fac Sci & Technol, Yokohama, Kanagawa 2238522, Japan

[3] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[4] Univ Paris 06, Inst Nanosci Paris, CNRS UMR 7588, F-75252 Paris, France

[5] Synchrotron SOLEIL CNRS, F-91192 Gif Sur Yvette, France

[6] Natl Inst Nat Sci, Inst Mol Sci, UVSOR Facil, Okazaki, Aichi 4448585, Japan

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 23期

关键词：

ANGLE-RESOLVED PHOTOEMISSION; SURFACE-STATE; ENERGY;

D O I：

10.1103/PhysRevB.84.235308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin- and angle-resolved photoemission spectroscopy measurements were performed on Bi1-xSbx samples at x = 0.04, 0.07, and 0.21 to study the change of the surface band structure from nontopological to topological. Energy shift of the T and L-s bulk bands with Sb concentration is quantitatively evaluated. An edge state becomes topologically nontrivial at x = 0.04. An additional trivial edge state appears at the L band gap that forms at x > 0.04 and apparently hybridize with the nontrivial edge state. A scenario for the topological transition mechanism is presented. Related issues of self-energy and temperature dependence of the surface state are also considered.

引用

页数：8

共 50 条

[21] Topological features of quantum transport in Bi1-xSbx (0 ≤ x ≤ 0.2) bicrystals
Muntyanu, Fiodor
Chistol, Vitalie
Condrea, Elena
Sidorenko, Anatolie
Fizika Nizkikh Temperatur, 2023, 49 (01): : 139 - 145
[22] QUANTITATIVE-ANALYSIS OF BI1-XSBX
CHRIST, B
OELGART, G
ROGASCHEWSKI, S
CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (05) : 623 - 632
[23] Prospects of nanostructures Bi1-xSbx for thermoelectricity
Nikolaeva, Albina A.
Konopko, Leonid A.
Huber, Tito E.
Bodiul, Pavel P.
Popov, Ivan A.
JOURNAL OF SOLID STATE CHEMISTRY, 2012, 193 : 71 - 75
[24] Temperature and magnetic dependence of the resistance and thermopower in the topological insulator Bi1-xSbx nanowires
Nikolaeva, Albina
Konopko, Leonid
Huber, Tito
Popov, Ivan
Bodiul, Pavel
Moloshnik, Evghenii
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (06): : 1325 - 1328
[25] A BI1-XSBX SEMICONDUCTOR-LASER
ALEKSANYAN, AG
KAZARYAN, RK
KHACHATRYAN, AM
KVANTOVAYA ELEKTRONIKA, 1984, 11 (03): : 492 - 496
[26] BI1-XSBX - NEW SEMICONDUCTOR MATERIAL
ALEKSEEVA, VG
LYFSHITS, TM
CHIRKOVA, EG
SHULMAN, AY
RADIOTEKHNIKA I ELEKTRONIKA, 1978, 23 (09): : 1926 - 1938
[27] Memristive Switching in Bi1-xSbx Nanowires
Han, Nalae
Park, Myung Uk
Yoo, Kyung-Hwa
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (14) : 9224 - 9230
[28] Electrodeposition of Bi1-xSbx thin films
Vereecken, PM
Ren, S
Sun, L
Searson, PC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (03) : C131 - C139
[29] DIELECTRIC PROPERTIES OF BI1-XSBX ALLOYS AT THE SEMICONDUCTOR-SEMIMETAL TRANSITION
RUDOLPH, R
KRUGER, H
FELLMUTH, B
HERRMANN, R
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 102 (01): : 295 - 301
[30] Percolation transition and physical properties of Bi1-xSbx solid solutions at low Bi concentration
Rogacheva, E., I
Doroshenko, A. N.
Khramova, T., I
Nashchekina, O. N.
Fedorov, A. G.
Mateychenko, P., V
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2020, 143

← 1 2 3 4 5 →