Study on growth and optical storage properties of Ce:Tb:KNSBN crystals

被引：0
|
作者：
Wang, J [1 ]
Zhang, ZH [1 ]
Zhu, ZB [1 ]
Wang, R [1 ]
机构：
[1] Habin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Peoples R China
来源：
ADVANCED OPTICAL STORAGE TECHNOLOGY | 2002年 / 4930卷
关键词：
Ce : Tb : KNSBN crystal; storage; phase conjugation reflectivity;
D O I：
10.1117/12.483293
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Doping CeO2 and Tb4O7 in KNSBN, the Ce:KNSBN crystal was grown. It is the first time that the crystal was grown by Czochalski. The phase conjugate reflectivity was measured to be the higher than 140% on transient state and to be higher than 90% on stable state. The out electric field can enhance the phase conjugate reflectivity on transient state. When E-0=4kv/cm(2) the transient phase conjugate reflectivity R=168% and the stable transient phase conjugate reflectivity R=120%. Ce:Tb:KNSBN crystals pumping on self phase conjugate reflectivity goes up to 62%. Cu:KMSBN was used as recorder and Ce:Tb:KNSBN was used as self-pumped conjugate to realize holographic associative memory.
引用
收藏
页码：512 / 515
页数：4
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