Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

被引：8

作者：

Tuktamyshev, Artur ^{[1
,3
]}

Fedorov, Alexey ^{[2
,3
]}

Bietti, Sergio ^{[1
,3
]}

Vichi, Stefano ^{[1
,3
]}

Tambone, Riccardo ^{[1
,3
]}

Tsukamoto, Shiro ^{[1
,3
]}

Sanguinetti, Stefano ^{[1
,3
]}

机构：

[1] Univ Milano Bicocca, Dept Mat Sci, Via R Cozzi 55, I-20125 Milan, Italy

[2] CNR, Ist Foton & Nanotecnol, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

[3] Polo Como, Lab Nanostruct Epitaxy & Spintron Silicon, Via F Anzani 42, I-22100 Como, Italy

来源：

SCIENTIFIC REPORTS | 2021年 / 11卷 / 01期

基金：

欧盟地平线“2020”;

关键词：

D O I：

10.1038/s41598-021-86339-3

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We investigated the nucleation of Ga droplets on singular GaAs(111)A substrates in the view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small critical cluster size of 1-2 atoms characterizes the droplet nucleation. Low values of the Hopkins-Skellam index (as low as 0.35) demonstrate a high degree of a spatial order of the droplet ensemble. Around 350. C the droplet size distribution becomes bimodal. We attribute this observation to the interplay between the local environment and the limitation to the adatom surface diffusion introduced by the Ehrlich-Schwobel barrier at the terrace edges.

引用

页数：11

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