Relationship between Lattice Strain and Efficiency for Sn-Perovskite Solar Cells

被引：120

作者：

Nishimura, Kohei ^{[1
,2
]}

Hirotani, Daisuke ^{[2
]}

Kamarudin, Muhammad Akmal ^{[1
,2
]}

Shen, Qing ^{[1
]}

Toyoda, Taro ^{[1
]}

Iikubo, Satoshi ^{[2
]}

Minemoto, Takashi ^{[3
]}

Yoshino, Kenji ^{[4
]}

Hayase, Shuzi ^{[1
,2
]}

机构：

[1] Univ Electrocommun, Fac Informat & Engn, 1-5-1 Chofugaoka, Chofu, Tokyo 1828585, Japan

[2] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Wakamatsu Ku, 2-4 Hibikino, Kitakyushu, Fukuoka 8080196, Japan

[3] Ritsumeikan Univ, Fac Sci & Engn, Dept Elect & Elect Engn, 1-1-1 Nojihigashi, Kusatsu, Shiga 5258577, Japan

[4] Miyazaki Univ, Dept Elect & Elect Engn, 1-1 Gakuenkibanadainishi, Miyazaki, Miyazaki 8892192, Japan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2019年 / 11卷 / 34期

关键词：

perovskite solar cells; Pb-free; lattice strain; Sn-perovskite; multi-cation; TIN HALIDE PEROVSKITES; LEAD-FREE; ADDITIVES; IODIDE;

D O I：

10.1021/acsami.9b09564

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the composition of Q(0.1)(FA(0.76)MA(0.25))(0.9)SnI3, Q is replaced with Na+, K+, Cs+, ethylammonium(+) (EA(+)), and butylammonium(+) (BA(+)), respectively, and the relationship between actually measured lattice strain and photovoltaic performances is discussed. The lattice strain evaluated by the Williamson-hall plot of X-ray diffraction data decreased as the tolerance factor was close to diffraction data decreased as the tolerance factor was close to one. The efficiency of the Sn-perovskite solar cell was enhanced as the lattice strain decreased. Among them, EA(0.1)(FA(0.75)MA(0.25))(0.9)SnI3 having lowest lattice strain gave the best result of 5.41%. Because the carrier mobility increased with a decrease in the lattice strain, these lattice strains would disturb carrier mobility and decrease the solar cell efficiency. Finally, the results that the efficiency of the SnGe-perovskite solar cells was gradually enhanced from 6.42 to 7.60% during storage, was explained by the lattice strain relaxation during the storage.

引用

页码：31105 / 31110

页数：6

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