Thermally induced defects in silicon irradiated with fast neutrons

被引：3
|
作者：
Misiuk, A. [1 ]
Wierzchowski, W. [2 ]
Wieteska, K. [3 ]
Romanowski, P. [4 ]
Bak-Misiuk, J. [4 ]
Prujszczyk, M. [1 ]
Londos, C. A. [5 ]
Graeff, W. [6 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[3] Inst Atom Energy, PL-05400 Otwock, Poland
[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[5] Univ Athens, Athens 15784, Greece
[6] DESY, HASYLAB, D-22603 Hamburg, Germany
来源：
RADIATION PHYSICS AND CHEMISTRY | 2009年 / 78卷
关键词：
Silicon; Neutron irradiation; Imaging; Defect structure; OXYGEN PRECIPITATION; CZ-SI;
D O I：
10.1016/j.radphyschem.2009.03.087
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Defect structure of Czochralski grown (111) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy 5 MeV, dose 5 x 10(16) cm(-2)) and annealed at up to 1400 K, also under hydrostatic At pressure equal to 1.1 GPa, has been investigated by high-resolution X-ray diffraction and synchrotron topography at HASY Laboratory. The annealing, especially at 1270 and 1400 K, results in precipitation of interstitial oxygen and creation of extended defects. A thermally induced oxygen precipitation at high temperatures-pressures in neutron-irradiated Cz-Si reveals the irradiation-related history of investigated samples. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：S67 / S70
页数：4
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