Nonlinear Photoelectric Properties by Strained MoS2 and SnO2 Core-Shell Nanotubes for Flexible Visible Light Photodetectors
被引:8
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作者:
Han, Jin Kyu
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Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Tech Univ Denmark, Dept Energy Convers & Storage, DK-2800 Lyngby, DenmarkKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Han, Jin Kyu
[1
,2
]
Song, Da Som
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Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South KoreaKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Song, Da Som
[1
]
Lim, Yi Rang
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Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 03722, South KoreaKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Lim, Yi Rang
[1
,3
]
Agbenyeke, Raphael E.
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Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South KoreaKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Agbenyeke, Raphael E.
[1
]
Castelli, Ivano E.
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机构:
Tech Univ Denmark, Dept Energy Convers & Storage, DK-2800 Lyngby, DenmarkKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Castelli, Ivano E.
[2
]
Esposito, Vincenzo
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Tech Univ Denmark, Dept Energy Convers & Storage, DK-2800 Lyngby, DenmarkKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Esposito, Vincenzo
[2
]
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Kim, Sun Young
[4
]
Bu, Sang Don
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机构:
Jeonbuk Natl Univ, Res Inst Phys & Chem, Dept Phys, Jeonju 54896, South KoreaKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Bu, Sang Don
[4
]
Song, Wooseok
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Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South KoreaKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Song, Wooseok
[1
]
Myung, Sung
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Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South KoreaKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Myung, Sung
[1
]
Lee, Sun Sook
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Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South KoreaKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Lee, Sun Sook
[1
]
Lim, Jongsun
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Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South KoreaKorea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
Lim, Jongsun
[1
]
机构:
[1] Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea
atomic layer deposition;
chemical vapor deposition;
density functional theory;
MoS;
(2) nanotubes;
photoelectric properties;
transition metal dichalcogenide;
D O I:
10.1002/admt.202001105
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
A new type of coaxial hetero-structured MoS2/SnO2 nanotube (MS-NT) array is rationally designed for flexible visible light photodetector. Herein, a suitable solution for fabricating MS-NT comprising SnO2 with controlled thickness and strain is proposed. The thickness of SnO2 deposited on MoS2 nanotubes are delicately manipulated by adjusting atomic layer deposition (ALD) cycles, which cause the internal tensile strain of the hybrid nanotubes. The photocurrent of the MS-NT-based photodetector exhibits high photoresponsivity values of 198.4 mA W-1 and external quantum efficiency of 0.78%. In the analysis, a linear correlation between the excitation power and the photocurrent extracted from the MNT-based devices is discerned. At the same time, a superlinearity of photocurrent in the MS-NT arrays-based device is found. Density functional theory calculations are adopted to unveil the strong correlation between the strain, bandgap, and photocurrent of the MS-NT, which is a decisive factor for understanding the experimental evidences. The detailed mechanism for enhance photoresponsivity is further suggested for the strain-tailored MS-NT arrays-based device. Such peculiar properties are expected to open a new chapter in the era of smart optical devices that require low driving voltage and high power efficiency.
机构:
Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R ChinaQingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
Sun, Weijian
Xi, Zhenyu
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机构:
Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R ChinaQingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
Xi, Zhenyu
Zheng, Haonan
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机构:
Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R ChinaQingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
Zheng, Haonan
Chen, Yi
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机构:
Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R ChinaQingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
Chen, Yi
Li, Changhao
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机构:
Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R ChinaQingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
Li, Changhao
Wang, Baoxiang
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机构:
Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
Global Energy Interconnect Res Inst Co Ltd, State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R ChinaQingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
Wang, Baoxiang
Hao, Chuncheng
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机构:
Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China
Global Energy Interconnect Res Inst Co Ltd, State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R ChinaQingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Peoples R China