Study of interface states of directly bonded silicon-on-insulator (SOI) structures

被引：0

作者：

Buldygin, SA ^{[1
]}

Bulycheva, TV ^{[1
]}

Golod, SV ^{[1
]}

Drofa, AT ^{[1
]}

Kamaev, GN ^{[1
]}

Skok, EM ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the experimental data on the temperature dependent transient photoconductivity obtained on bonded SOI structures are presented. It's shown, that during bonding process at the interface of the sample electrically active states appear. The values of activation energies and capture cross-sections of charge carriers which are referred to the interface states similar to surface states at the interface of silicon and thermal oxide are obtained.

引用

页码：49 / 53

页数：5

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