Image based in situ electron-beam drift detection by silicon photodiodes in scanning-electron microscopy and an electron-beam lithography system

被引：2
|
作者：
Kuo, Yi-Hung [1 ]
Wu, Cheng-Ju [1 ]
Kuo, Fu-Tsun [1 ]
Yen, Jia-Yush [1 ]
Chen, Yung-Yaw [2 ]
机构：
[1] Natl Taiwan Univ, Dept Mech Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
来源：
MICROELECTRONIC ENGINEERING | 2013年 / 103卷
关键词：
Electron-beam lithography; Electron-beam drift; Back scattered electron; Electron detectors;
D O I：
10.1016/j.mee.2012.08.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A silicon-photodiode detector can be used to sense the position of the electron beam in a scanning-electron microscope. In order to validate the implementation of a electron beam drift detector, a silicon photodiode was constructed with a low profile and small working distance. The performance in detecting the drift of the electron beam over time was analyzed. It was also shown that a back scattered-electron image can be created with electron scanning, which allows the development of highly sensitive in situ beam position feedback in the electron-beam direct-write lithography system. (C) 2012 Elsevier B.V. All rights reserved.
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页码：137 / 143
页数：7
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