Huge magnetoresistance in graphene-based magnetic tunnel junctions with superlattice barriers

被引：7
|
作者：
Chen, C. H. [1 ]
Chao, B. S. [1 ]
Hsueh, W. J. [1 ]
机构：
[1] Natl Taiwan Univ, Dept Engn Sci & Ocean Engn, Nanomagnetism Grp, Taipei 10660, Taiwan
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 33期
关键词：
graphene electronic transport; spintronics; giant magnetoresistance; superlattice; ROOM-TEMPERATURE; DIRAC FERMIONS;
D O I：
10.1088/0022-3727/48/33/335004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Combining the features of graphene, spintronics and superlattices, this study reports huge tunnel magnetoresistance achieved using graphene-based magnetic tunnel junctions with superlattice barriers. Our calculation results show that the tunnel magnetoresistance of as much as 10(7)% is obtained using a magnetic tunnel junction with a six-cell superlattice barrier. This magnetoresistance increases as the number of cells in the superlattice barrier increases. This remarkable value can be linked to the artificially tailored band structures of the superlattice barriers. This generic nature provides new opportunities for other spintronics applications, using graphene superlattices.
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页数：6
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