Large and controllable tunneling magnetoresistance in ferromagnetic/magnetic-semiconductor/ferromagnetic trilayers

被引：2
|
作者：
Zhang PeiPei [1 ]
Xu Ming [1 ]
机构：
[1] Southwest Univ Nationalities, Sch Elect & Informat Engn, Key Lab Informat Mat Sichuan Prov, Chengdu 610041, Peoples R China
来源：
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2013年 / 56卷 / 08期
关键词：
magnetic semiconductor; spin-orbit coupling; transmission coefficient; tunneling magnetoresistance; SEMICONDUCTOR; JUNCTIONS; INJECTION; BARRIER;
D O I：
10.1007/s11433-013-5156-8
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work, we selected a magnetic-semiconductor as an interlayer and investigated the electronic transport properties in the ferromagnetic/ferromagnetic-semiconductor/ferromagnetic (FM/FS/FM) trilayers. The results indicate that the large TMR comparable to that in ferromagnetic/metal oxide/ferromagnetic sandwich can be obtained in the FM/FS/FM multilayers with considering the spin filter effect in the magnetic semiconductor layer. Moreover, the transmission coefficient and TMR can be tuned through thickness, Rashba spin-orbit coupling strength and molecular field of the magnetic semiconductor. Our calculations could provide a way to design the semiconductor spintronic devices with excellent and controllable properties.
引用
收藏
页码：1514 / 1519
页数：6
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