Large and controllable tunneling magnetoresistance in ferromagnetic/magnetic-semiconductor/ferromagnetic trilayers

被引：0
|
作者：
ZHANG PeiPei [1 ]
XU Ming [1 ]
机构：
[1] Key Lab of Information Materials of Sichuan Province,School of Electrical and Information Engineering,Southwest University for Nationalities
来源：
Science China(Physics,Mechanics & Astronomy) | 2013年 / 08期
关键词：
magnetic semiconductor; spin-orbit coupling; transmission coefficient; tunneling magnetoresistance;
D O I：
暂无
中图分类号：
TM271 [磁性材料、铁磁材料];
学科分类号：
0805 ; 080502 ; 080801 ;
摘要：
In this work, we selected a magnetic-semiconductor as an interlayer and investigated the electronic transport properties in the ferromagnetic/ferromagnetic-semiconductor/ferromagnetic (FM/FS/FM) trilayers. The results indicate that the large TMR comparable to that in ferromagnetic/metal oxide/ferromagnetic sandwich can be obtained in the FM/FS/FM multilayers with considering the spin filter effect in the magnetic semiconductor layer. Moreover, the transmission coefficient and TMR can be tuned through thickness, Rashba spin-orbit coupling strength and molecular field of the magnetic semiconductor. Our calculations could provide a way to design the semiconductor spintronic devices with excellent and controllable properties.
引用
收藏
页码：1514 / 1519
页数：6
相关论文
共 50 条
  • [1] Large and controllable tunneling magnetoresistance in ferromagnetic/magnetic-semiconductor/ferromagnetic trilayers
    Zhang PeiPei
    Xu Ming
    [J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2013, 56 (08) : 1514 - 1519
  • [2] Large and controllable tunneling magnetoresistance in ferromagnetic/magnetic-semiconductor/ferromagnetic trilayers
    PeiPei Zhang
    Ming Xu
    [J]. Science China Physics, Mechanics and Astronomy, 2013, 56 : 1514 - 1519
  • [3] SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE
    Liu, De
    Zhang, Hongmei
    [J]. MODERN PHYSICS LETTERS B, 2008, 22 (27): : 2667 - 2676
  • [4] Tunneling magnetoresistance in ferromagnetic semiconductor tunnel junctions
    Tao, YC
    Hu, JG
    [J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 18 (16): : 2247 - 2256
  • [5] Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
    Tanaka, M
    Higo, Y
    [J]. PHYSICAL REVIEW LETTERS, 2001, 87 (02)
  • [6] Tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor heterostructures
    Tanaka, M
    Higo, Y
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 495 - 503
  • [7] Ferromagnetic-insulator-ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions
    Moodera, JS
    Kinder, LR
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 4724 - 4729
  • [8] Tunneling conductance and magnetoresistance of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions
    Li, Y
    Li, BZ
    Zhang, WS
    Dai, DS
    [J]. PHYSICAL REVIEW B, 1998, 57 (02): : 1079 - 1084
  • [9] Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode
    Samanta, Kartik
    Jiang, Yuan-Yuan
    Paudel, Tula R.
    Shao, Ding-Fu
    Tsymbal, Evgeny Y.
    [J]. PHYSICAL REVIEW B, 2024, 109 (17)
  • [10] A novel magnetoresistance induced by charge ordering in ferromagnetic/charge-ordered/ferromagnetic trilayers
    Wang, Haiou
    Li, Jinwei
    Su, Kunpeng
    Huo, Dexuan
    Tan, Weishi
    [J]. EPL, 2015, 112 (02)
12345