Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface

被引：33
|
作者：
Yang, Xiaozhe [1 ]
Yang, Xu [1 ]
Kawai, Kentaro [1 ]
Arima, Kenta [1 ]
Yamamura, Kazuya [1 ]
机构：
[1] Osaka Univ, Div Precis Sci & Technol & Appl Phys, Grad Sch Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan
来源：
ELECTROCHEMISTRY COMMUNICATIONS | 2019年 / 100卷
关键词：
Silicon carbide; Ultrasonic-assisted electrochemical mechanical polishing; Ultrasonic-assisted anodic oxidation; Ultrasonic vibration; MECHANISM;
D O I：
10.1016/j.elecom.2019.01.012
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An ultrasonic-assisted electrochemical mechanical polishing (UAECMP) technique that combines ultrasonic vibration and electrochemical mechanical polishing (ECMP) is proposed. The effect of ultrasonic vibration on the anodic oxidation rate of a 4H-SiC (0001) surface was studied, and it was confirmed that ultrasonic vibration significantly enhanced the anodic oxidation of SiC. Compared with conventional anodic oxidation, the oxidation rate increased by about 34% with ultrasonic assistance (UA) in the initial oxidation stage, and by about 11% during subsequent anodic oxidation. In addition, the oxidation can be promoted continuously with increasing oxidation time owing to the porous structure of the oxide layer. UAECMP is very promising as an efficient finishing technique for SiC surfaces.
引用
收藏
页码：1 / 5
页数：5
相关论文
共 50 条
  • [41] The defects regulating for the electronic structure and optical properties of 4H-SiC with (0001) surface
    Fan, Menghui
    Cen, Weifu
    Cai, Xunming
    Liao, Yangfang
    Xie, Jing
    Xie, Quan
    APPLIED SURFACE SCIENCE, 2018, 427 : 851 - 856
  • [42] First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface
    Sawada, Keisuke
    Iwata, Jun-Ichi
    Oshiyama, Atsushi
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 201 - 205
  • [43] The interaction of Pr2O3 with 4H-SiC(0001) surface
    Goryachko, A
    Paloumpa, I
    Beuckert, G
    Burkov, Y
    Schmeisser, D
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 265 - 268
  • [44] Surface Observation of 4H-SiC (0001) Planarized by Catalyst-referred Etching
    Sadakuni, Shun
    Pho, Bui Van
    Dai, Ngo Xuan
    Sano, Yasuhisa
    Yagi, Keita
    Murata, Junji
    Okamoto, Takeshi
    Tachibana, Kazuma
    Yamauchi, Kazuto
    PROCEEDINGS OF PRECISION ENGINEERING AND NANOTECHNOLOGY (ASPEN2011), 2012, 516 : 452 - +
  • [45] Surface abstraction reactions at experimental temperatures; A theoretical study of 4H-SiC(0001)
    Olander, J
    Larsson, K
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 231 - 234
  • [46] Coexistence of bunching and meandering instability in simulated growth of 4H-SiC(0001) surface
    Krzyzewski, Filip
    Zaluska-Kotur, Magdalena A.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (21)
  • [47] Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001) and 4H-SiC(0001) substrates by chemical vapor deposition
    Souqui, Laurent
    Sharma, Sachin
    Hogberg, Hans
    Pedersen, Henrik
    DALTON TRANSACTIONS, 2022, 51 (41) : 15974 - 15982
  • [48] High-integrity finishing of 4H-SiC (0001) by plasma-assisted polishing
    Yamamura, Kazuya
    Takiguchi, Tatsuya
    Ueda, Masaki
    Hattori, Azusa N.
    Zettsu, Nobuyuki
    ADVANCES IN ABRASIVE TECHNOLOGY XIII, 2010, 126-128 : 423 - 428
  • [49] Si/C and H coadsorption at 4H-SiC{0001} surfaces
    Wachowicz, E.
    APPLIED SURFACE SCIENCE, 2016, 373 : 61 - 64
  • [50] Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask
    Chen, Y
    Kimoto, T
    Takeuchi, Y
    Malhan, RK
    Matsunami, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7A): : 4909 - 4910
12345