Adaptation of microelectronics simulator to the polycrystalline silicon technology

被引：1

作者：

Gaillard, T ^{[1
]}

Lhermite, H ^{[1
]}

Bonnaud, O ^{[1
]}

Rogel, R ^{[1
]}

机构：

[1] Univ Rennes 1, Grp Microelect & Visualisat, CNRS, UPRESA 6076, FR-35042 Rennes, France

来源：

SOLID STATE PHENOMENA | 1999年 / 67-8卷

关键词：

polycrystalline silicon; simulation; electrical modeling;

D O I：

10.4028/www.scientific.net/SSP.67-68.131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of this study, in the first time, is to calibrate the simulation parameters of process steps such as deposition and etching involving polycrystalline silicon films in order to well simulate the structural fabrication of devices. In a second time, this work consists in elaboration of new models for electrical parameters of polycrystalline silicon and their implementation in a microelectronics simulator, in this case Atlas simulator of SILVACO.

引用

页码：131 / 136

页数：6

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