Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

被引：135

作者：

Balatti, S. ^{[1
]}

Larentis, S. ^{[2
]}

Gilmer, D. C. ^{[3
]}

Ielmini, D. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, MI, Italy

[2] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA

[3] SEMATECH, Austin, TX 78741 USA

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 10期

关键词：

resistive switching; metalinsulator transitions; semiconductor memory; nonvolatile storage; nanoionics; BIPOLAR;

D O I：

10.1002/adma.201204097

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Multilevel operation in resistive switching memory (RRAM) based on HfO x is demonstrated through variable sizes and orientations of the conductive filament. Memory states with the same resistance, but opposite orientation of defects, display a different response to an applied read voltage, therefore allowing an improvement of the information stored in each physical cell. The multilevel scheme allows a 50% increase (from 2 to 3 bits) of the stored information. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1474 / 1478

页数：5

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