Nonlinear dielectric relaxation of Mn doped polycrystalline (Ba,Sr)TiO3 thin films over the temperature range of 4.2-473 K

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作者
Baniecki, JD [1 ]
Laibowitz, RB [1 ]
Shaw, TM [1 ]
Duncombe, PR [1 ]
Kotecki, DE [1 ]
Shen, H [1 ]
Lian, J [1 ]
Ma, QY [1 ]
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[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
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T [工业技术];
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08 ;
摘要
We have investigated the dielectric relaxation currents of Mn doped polycrystalline Ba0.7Sr0.3TiO3 (BSTO) thin films as a function of applied electric field and temperature (4.2 - 473 K). The dielectric relaxation currents followed a power law time dependence, J(t)=J(0)t(-n), over the entire temperature range. Plots of log(J,) vs. reciprocal temperature were not linear and showed slopes approaching values of 0.35 eV at high temperatures which rapidly decreased to 0.25 meV at lower temperatures. The relaxation currents were found to be nonlinear with applied field. The observed nonlinearity of the field dependence of the relaxation currents can be understood in terms of the nonlinear relaxation component of the total capacitance. An equivalent circuit model for a paraelectric BSTO thin film capacitor is presented and possible polarization mechanisms are briefly discussed.
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页码:23 / 28
页数:6
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