Origin of Bulk Uniaxial Anisotropy in Zinc-Blende Dilute Magnetic Semiconductors

被引：50
|
作者：
Birowska, M. [1 ]
Sliwa, C. [2 ]
Majewski, J. A. [1 ]
Dietl, T. [1 ,2 ]
机构：
[1] Univ Warsaw, Fac Phys, Inst Theoret Phys, PL-00681 Warsaw, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 23期
关键词：
MOLECULAR-BEAM EPITAXY; ELECTRON THEORY; (GA; MN)AS; GAAS;
D O I：
10.1103/PhysRevLett.108.237203
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It is demonstrated that the nearest-neighbor Mn pair on the GaAs (001) surface has a lower energy for the [(1) over bar 10] direction compared to the [110] case. According to the group theory and Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.
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页数：5
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