High-density MIM capacitors using Al2O3 and AlTiOx dielectrics

被引：136
|
作者：
Chen, SB [1 ]
Lai, CH
Chin, A
Hsieh, JC
Liu, J
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] United Microelect Corp, Hsinchu, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 04期
关键词：
capacitor; dielectric constant; frequency dependence; high k; MIM; RF;
D O I：
10.1109/55.992833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
引用
收藏
页码：185 / 187
页数：3
相关论文
共 50 条
  • [21] DC AND RF CHARACTERISTICS STUDY OF MIM CAPACITORS WITH VARIOUS Al2O3 THICKNESSES
    Zhou, Jiahui
    Chang, Hudong
    Zhang, Xufang
    Zeng, Zhenhua
    Yang, Xu
    Li, Haiou
    Liu, Honggang
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [22] Synthesis of low-density γ-Al2O3 from high-density α-Al2O3 in the presence of LiBO2 melt under high pressure
    He, Kai
    He, Duanwei
    Lei, Li
    Zou, Yongtao
    Qin, Jiaqian
    Wang, Shanmin
    SOLID STATE COMMUNICATIONS, 2010, 150 (43-44) : 2106 - 2108
  • [23] Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3 Stacks for High-Performance MIM Capacitors
    Zhang, Qiu-Xiang
    Zhu, Bao
    Ding, Shi-Jin
    Lu, Hong-Liang
    Sun, Qing-Qing
    Zhou, Peng
    Zhang, Wei
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (11) : 1121 - 1123
  • [24] Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
    Kim, SJ
    Cho, BJ
    Li, MF
    Zhu, CX
    Chin, A
    Kwong, DL
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) : 442 - 444
  • [25] High Capacitance Density and Thermal Leakage Improvement by Using High-κ Al2O3-Doped SrTiO3 MIM Capacitors
    Huang, C. C.
    Cheng, C. H.
    Lin, C. W.
    Chang, L. M.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (06) : H624 - H627
  • [26] Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
    Chen, SB
    Lai, CH
    Chan, KT
    Chin, A
    Hsieh, JC
    Liu, J
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) : 203 - 205
  • [27] Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization model
    Becu, S.
    Cremer, S.
    Autran, J. L.
    MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) : 2422 - 2426
  • [28] Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing
    Zhu, Bao
    Wu, Xiaohan
    Liu, Wen-Jun
    Ding, Shi-Jin
    Zhang, David Wei
    Fan, Zhongyong
    NANOSCALE RESEARCH LETTERS, 2019, 14 (1):
  • [29] Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing
    Bao Zhu
    Xiaohan Wu
    Wen-Jun Liu
    Shi-Jin Ding
    David Wei Zhang
    Zhongyong Fan
    Nanoscale Research Letters, 2019, 14
  • [30] High-Density MIM Capacitors With Porous Anodic Alumina Dielectric
    Hourdakis, E.
    Nassiopoulou, A. G.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) : 2679 - 2683
12345