Wide bandgap semiconductors are undoubtedly the power device's next development direction

被引：0
|
作者：
Hu, Xiarong [1 ]
机构：
[1] Univ Elect Sci & Technol China, Chengdu, Peoples R China
来源：
ELECTRONICS LETTERS | 2012年 / 48卷 / 19期
关键词：
D O I：
10.1049/el.2012.3086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1170 / 1170
页数：1
相关论文
共 50 条
  • [31] An Overview of Wide Bandgap Power Semiconductor Device Packaging Techniques for EMI Reduction
    Zhang, Boyi
    Wang, Shuo
    2018 IEEE SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY, SIGNAL INTEGRITY AND POWER INTEGRITY (EMC, SI & PI), 2018, : 297 - 302
  • [32] Influence of material properties on wide-bandgap microwave power device characteristics
    Morvan, E
    Kerlain, A
    Dua, C
    Brylinski, C
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 731 - 736
  • [33] Development trends of Ga N-based wide bandgap semiconductors: from solid state lighting to power electronic devices
    Bo SHEN
    Frontiers of Optoelectronics, 2015, 8 (04) : 456 - 460
  • [34] Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices
    Raynaud, Christophe
    Tournier, Dominique
    Morel, Herve
    Planson, Dominique
    DIAMOND AND RELATED MATERIALS, 2010, 19 (01) : 1 - 6
  • [35] Design of power converters for induction heating applications taking advantage of wide-bandgap semiconductors
    Lucia, Oscar
    Sarnago, Hector
    Burdio, Jose M.
    COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2017, 36 (02) : 483 - 488
  • [36] International Technology Roadmap for Wide Bandgap Power Semiconductors: A Five Year Review [Expert View]
    Wilson, Peter
    IEEE POWER ELECTRONICS MAGAZINE, 2025, 12 (01): : 108 - 111
  • [37] From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
    Woo, Kelly
    Bian, Zhengliang
    Noshin, Maliha
    Martinez, Rafael Perez
    Malakoutian, Mohamadali
    Shankar, Bhawani
    Chowdhury, Srabanti
    JOURNAL OF PHYSICS-MATERIALS, 2024, 7 (02):
  • [38] Development of wide bandgap semiconductor photonic device structures by excimer laser micromachining
    Zhao, Q
    Lukitsch, M
    Xu, J
    Auner, G
    Niak, R
    Kuo, PK
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W11.69
  • [39] Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters
    Chang, En-Chih
    Meng, Chenxi
    2019 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2019), 2019,
  • [40] Point defects: key issues for II-oxides wide-bandgap semiconductors development
    Xie Xiu-Hua
    Li Bing-Hui
    Zhang Zhen-Zhong
    Liu Lei
    Liu Ke-Wei
    Shan Chong-Xin
    Shen De-Zhen
    ACTA PHYSICA SINICA, 2019, 68 (16)
12345