Wide bandgap semiconductors are undoubtedly the power device's next development direction

被引：0
|
作者：
Hu, Xiarong [1 ]
机构：
[1] Univ Elect Sci & Technol China, Chengdu, Peoples R China
来源：
ELECTRONICS LETTERS | 2012年 / 48卷 / 19期
关键词：
D O I：
10.1049/el.2012.3086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1170 / 1170
页数：1
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