High speed silicon modulators and detectors

被引：0

作者：

Vivien, L. ^{[1
]}

Marris-Morini, D. ^{[1
]}

Ziebell, M. ^{[1
]}

Rasigade, G. ^{[1
]}

Virot, L. ^{[1
,2
,3
]}

Hartmann, J-M ^{[2
]}

Cassan, E. ^{[1
]}

Crozat, P. ^{[1
]}

Bouville, D. ^{[1
]}

Baudot, C. ^{[3
]}

Boeuf, F. ^{[3
]}

Fedeli, J-M ^{[2
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS UMR 8622, Bat 220, F-91405 Orsay, France

[2] CEA Grenoble, Minatec, CEA LETI, F-38054 Grenoble, France

[3] STMicroelect, Silicon Technol Dev, Crolles, France

来源：

2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2012年

关键词：

WAVE-GUIDE; PHOTODETECTOR;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

40Gbit/s optical modulators based on carrier depletion effect and germanium photo detectors integrated in silicon waveguides have been demonstrated at a wavelength of 1.55 mu m.

引用

页数：3

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