Improving the field emission property of zinc oxide by directly growing on graphene layer

被引：0
|
作者：
Zhao, Ning [1 ]
Shi, Chenyan [1 ]
Qu, Ke [1 ]
Li, Chi [1 ]
Lei, Wei [1 ]
Zhang, Xiaobing [1 ]
机构：
[1] Southeast Univ, Display Res Ctr, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
来源：
2013 IEEE 14TH INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2013年
关键词：
graphene; Zinc oxide; field emission;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Zinc oxide was directly grown on the graphene layer by the hydrothermal synthesis method, and the field emission property of this hybrid structure was tested by a diode structure device. Compared with the Zinc oxide directly grown on the silicon substrates, the hybrid emitter shows better performance in the field emission properties, including low turn-on field, threshold field and high emission current. The results provide an efficient way to improve the field emission property of ZnO by using graphene layer.
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页数：2
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