共 50 条
- [12] Theoretical model for analysis and optimization of group III-nitrides growth by molecular beam epitaxy MRS Internet J. Nitride Semicond. Res., (7d):
- [14] SOME ASPECTS OF QUANTITATIVE ANALYSIS OF TERNARY ALLOYS OF GROUP III-NITRIDES BY AUGER ELECTRON SPECTROSCOPY JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2011, 62 (06): : 367 - 369
- [16] Effect of crystal symmetry, strain and spin-orbit coupling on electronic and optical properties of III-nitrides Journal of Crystal Growth, 189-190 : 625 - 629
- [17] Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 14 (29): : 6719 - 6725
- [18] Analysis of V-shaped Pits originated from Threading Dislocation in III-nitrides compound for Light Emitting Diodes WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15, 2014, 61 (04): : 313 - 317
- [20] Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography Nanoscale Research Letters, 2016, 11