A two dimensional analytical model study of the performance of junctionless trial-material cylindrical surrounding-gate MOSFET

被引：0

作者：

Fairouz, Lagraf ^{[1
,2
]}

Djamil, Rechem ^{[1
,3
]}

Kamel, Guergouri ^{[1
,2
]}

Aicha, Khial ^{[1
,2
]}

机构：

[1] Univ Larbi Ben MhidiOum El Bouaghi, Lab Act Components & Mat, Oum El Bouaghi, Algeria

[2] Univ LarbiBen MHidi, Dept Mat Sci, Fac Exact Sci & Sci Nat & Life, Oum El Bouaghi, Algeria

[3] Univ Larbi Ben Mhidi Oum El Bouaghi, Dept Elect Engn, Fac Sci & Appl Sci, Oum El Bouaghi, Algeria

来源：

2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS) | 2016年

关键词：

Surrounding-gate MOSFET; Trial-material gate; Junctionless transistor; Short channel effects; TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new junctionless trial-material cylindrical surrounding gate-MOSFET (JLTMCSG-MOSFET) has been investigated to improve carrier transport efficiency. Therefore, it is expected that the short channel effects are reduced. An analytical model has been used; it is based on an approximated solution of two-dimensional Poisson's equation. The device performance is studied in terms of subthreshold current, surface potential, electrical field, drain induced barrier lowering (DIBL) and subthreshold slope (SS). The accuracy of the analytical model was verified using numerical simulation MEDICI. A good agreement was obtained.

引用

页码：195 / 198

页数：4

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