Band offsets between ZnGeN2, GaN, ZnO, and ZnSnN2 and their potential impact for solar cells

被引：92
|
作者：
Punya, Atchara [1 ]
Lambrecht, Walter R. L. [1 ]
机构：
[1] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
来源：
PHYSICAL REVIEW B | 2013年 / 88卷 / 07期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1103/PhysRevB.88.075302
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The band offsets between the Zn-IV-N-2 nitrides, ZnGeN2 and ZnSnN2, and two other closely lattice matched semiconductors, ZnO and GaN, are calculated using density functional theory calculations including quasiparticle corrections. The interface dependence as well as the role of strain are investigated. A staggered type-II alignment is found between ZnGeN2, GaN, and ZnO, with ZnO having the lower and ZnGeN2 having the higher valence band maximum. The potential benefits of this alignment for photovoltaic applications are pointed out.
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页数：6
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