Characterization of chemically amplified resist for X-ray lithography by Fourier transform infrared spectroscopy

被引：14

作者：

Tan, TL ^{[1
]}

Wong, D ^{[1
]}

Lee, P ^{[1
]}

Rawat, RS ^{[1
]}

Springham, S ^{[1
]}

Patran, A ^{[1
]}

机构：

[1] Nanyang Technol Univ, Natl Inst Educ, Singapore 637616, Singapore

来源：

THIN SOLID FILMS | 2006年 / 504卷 / 1-2期

关键词：

chemically amplified resist SU-8;

D O I：

10.1016/j.tsf.2005.09.151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SU-8 resist was characterized for X-ray lithography from a plasma focus source by studying its cross-linking process using Fourier transform infrared (FT-IR) spectroscopy. The cross-linking process of the resist during post-exposure bake (PEB) was accurately monitored using the infrared absorption peaks at 862, 914, and 1128 cm(-1). Results showed that the cross-linking of SU-8 was effectively completed at the exposure dose of 2500 mJ/cm(2) for resist thickness of 25 mu m. Reliable processing conditions consisted of an intermediate PEB at 65 degrees C for 5 min, with the PEB temperature ramped up to 95 degrees C over 1.5 min and then followed by a final PEB at 95 degrees C for 5 min. Test structures with aspect ratio 20:1 were obtained. (c) 2005 Elsevier B.V. All rights reserved.

引用

下载

页码：113 / 116

页数：4

共 50 条

[1] Study of a chemically amplified resist for X-ray lithography by Fourier transform infrared spectroscopy
Tan, TL
Wong, D
Lee, P
Rawat, RS
Patran, A
APPLIED SPECTROSCOPY, 2004, 58 (11) : 1288 - 1294
[2] Chemically amplified resist for micromachining using X-ray lithography
Tan, TL
Kudryashov, VA
Tan, BL
MATERIALS & PROCESS INTEGRATION FOR MEMS, 2002, 9 : 99 - 111
[3] Characterization of acid diffusion for a negative chemically amplified resist using X-ray proximity lithography
Choi, BK
Yang, JS
Lee, KH
Kim, O
MICROELECTRONIC ENGINEERING, 1998, 42 : 301 - 304
[4] FT-IR study of a chemically amplified resist for X-ray lithography
Tan, TL
Kudryashov, VA
Tan, BL
APPLIED SPECTROSCOPY, 2003, 57 (07) : 842 - 849
[5] A chemically-amplified negative resist optimized for high-resolution x-ray lithography
Nakamura, J
Kawai, Y
Deguchi, K
Oda, M
Matsuda, T
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 455 - 462
[6] EFFECT OF ACID DIFFUSION ON RESOLUTION OF A CHEMICALLY AMPLIFIED RESIST IN X-RAY-LITHOGRAPHY
NAKAMURA, J
BAN, H
DEGUCHI, K
TANAKA, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (10): : 2619 - 2625
[7] Structural Characterization of Four Chinese Bituminous Coals by X-Ray Diffraction, Fourier-Transform Infrared Spectroscopy and X-Ray Photoelectron Spectroscopy
Qiu, Shuxing
Zhang, Shengfu
Zhou, Xiaohu
Zhu, Rongjin
Qiu, Guibao
Wu, Yue
Suo, Guangsheng
CHARACTERIZATION OF MINERALS, METALS, AND MATERIALS 2019, 2019, : 11 - 22
[8] Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography
Reynolds, GW
Taylor, JW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 334 - 344
[9] Characterization of Delhi iron pillar rust by X-ray diffraction, Fourier transform infrared spectroscopy and Mossbauer spectroscopy
Balasubramaniam, R
Kumar, AVR
CORROSION SCIENCE, 2000, 42 (12) : 2085 - 2101
[10] SINGLE LAYER CHEMICALLY AMPLIFIED RESIST PROCESSES FOR DEVICE FABRICATION BY X-RAY-LITHOGRAPHY
SEEGER, D
VISWANATHAN, R
BLAIR, C
GELORME, J
CONLEY, W
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2620 - 2627

← 1 2 3 4 5 →