Mask and Wafer Topography Effects in Optical and EUV-Lithography

被引：0

作者：

Erdmann, A. ^{[1
]}

Shao, F. ^{[1
]}

Evanschitzky, P. ^{[1
]}

Fuehner, T. ^{[1
]}

机构：

[1] Fraunhofer IISB, Erlangen, Germany

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) | 2010年 / 27卷 / 01期

关键词：

D O I：

10.1149/1.3360653

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The detailed understanding and accurate modeling of light diffraction from (sub-) wavelength size features on lithographic masks and wafers becomes indispensable for the development and optimization of advanced lithographic processes. This is demonstrated by two examples: optical proximity correction (OPC) for optical/EUV masks and wafer topography induced linewidth variations in double patterning.

引用

页码：415 / 420

页数：6

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