A Novel Inverter Topology for Reduction of Common Mode Voltage for GaN-based Variable Frequency Inverter

Wide bandgap (WBG) semiconductor power devices are becoming increasing popular as an alternative to conventional Si devices in power applications. While these WBG devices have many inherent benefits, one downside of these devices is the potential for increased emission of electromagnetic interference (EMI) due to the increased switching frequency and turn-on/off capabilities. To mitigate this effect, this paper presents a novel inverter topology to reduce the source of the common mode EMI noise, thus, potentially reducing the required EMI filter size. In this study, the novel topology is implemented as a three-phase voltage source inverter utilizing GaN HEMTs, and is simulated with circuit simulation software LTSpice with device models provided by manufacturer, and results are analyzed with MATLAB. A characterization of the key design parameters for the novel topology is also provided.