Design of a Low Voltage Band-gap Reference Circuit for OLED-On-Silicon

被引：0
|
作者：
Xu Meihua [1 ,2 ,3 ]
Wu Jian [1 ]
Ran Feng [1 ,2 ,3 ]
Li Tiezhu [2 ]
机构：
[1] Shanghai Univ, Microelect Res & Dev Ctr, Campus POB 25, 149 Yanchang Rd, Shanghai 200072, Peoples R China
[2] Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200072, Peoples R China
[3] Shanghai Univ, Minist Educ, Key Lab Adv Displays & Syst Applicat, Shanghai 200072, Peoples R China
来源：
2008 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING, VOLS 1 AND 2 | 2008年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a design of low voltage band-gap reference circuit for OLED-On-Silicon. In order to make the op-amp working in the high-gain area, the boost technique is used in the amplifier to increase the gate drive ability. The reference source uses first-order temperature compensation design to eliminate the temperature influence to voltage source. Simultaneously, the power dissipation is greatly decrease because the amplifier designed is working in the weak inversion layer. The simulation is conducted in chartered 0.35um 2-poly 4-metal 3.3V/18V high voltage process, and the results show that the proposed design meets the scheduled requirement and realizes the application of source voltage under 1.8V.
引用
收藏
页码：364 / +
页数：2
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