Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

被引：6

作者：

Ji, Peiyu ^{[1
,2
,3
,4
]}

Yu, Jun ^{[1
,2
,3
,4
]}

Huang, Tianyuan ^{[1
,2
,3
,4
]}

Jin, Chenggang ^{[1
,2
,3
,4
]}

Yang, Yan ^{[1
,2
,3
,4
]}

Zhuge, Lanjian ^{[1
,2
,5
]}

Wu, Xuemei ^{[1
,2
,3
,4
]}

机构：

[1] Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China

[2] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Peoples R China

[3] Soochow Univ, Educ Minist China, Key Lab Adv Opt Mfg Technol Jiangsu Prov, Suzhou 215006, Peoples R China

[4] Soochow Univ, Educ Minist China, Key Lab Modern Opt Technol Educ, Suzhou 215006, Peoples R China

[5] Soochow Univ, Anal & Testing Ctr, Suzhou 215123, Peoples R China

来源：

PLASMA SCIENCE & TECHNOLOGY | 2018年 / 20卷 / 02期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

helicon wave plasma; diamond; like carbon film; sp(3) content; Raman spectra; DLC FILMS; DISCHARGE; RAMAN;

D O I：

10.1088/2058-6272/aa94bd

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 mu mh(-1) at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H-alpha radicals play an important role in the growth of DLC films. The results show that the H-alpha radicals are beneficial to the formation and stabilization of C=C bond from sp(2) to sp(3).

引用

页数：6

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