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A high-frequency semiconductor generator of high-voltage nanosecond pulses

被引：6
|
作者：
Voronkov V.B. [1 ]
Grekhov I.V. [1 ]
Kozlov A.K. [1 ]
Korotkov S.V. [1 ]
Stepanyants A.L. [1 ]
Khristyuk D.V. [1 ]
机构：
[1] Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021
来源：
Instruments and Experimental Techniques | 2007年 / 50卷 / 03期
关键词：
Electric generators - Electric potential - Nanotechnology - Signal theory - Switching circuits;
D O I：
10.1134/S0020441207030104
中图分类号：
学科分类号：
摘要：
A generator of high-voltage rectangular nanosecond pulses equipped with switches in the form of assemblies of deep-level dynistors connected in series is described. A control circuit for dynistors based on an assembly of inversely switched-off diodes connected in series is considered. The generator can operate at a frequency of 10 Hz and form (at a 20-pF load) rectangular voltage pulses with short (4 ns) leading and trailing edges and a short (25 ns) delay relative to an external control signal. The amplitude and duration of output pulses are controlled smoothly in the ranges 7-9 kV and 100-600 ns, respectively. The spread of moments of operation is within 0.5 ns. © Nauka/Interperiodica 2007.
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页码：356 / 358
页数：2
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