Insights into the off-state breakdown mechanisms in power GaN HEMTs

被引：16

作者：

Zagni, N. ^{[1
]}

Puglisi, F. M. ^{[1
]}

Pavan, P. ^{[1
]}

Chini, A. ^{[1
]}

Verzellesi, G. ^{[2
,3
]}

机构：

[1] Univ Modena & Reggio Emilia, DIEF, Modena, Italy

[2] Univ Modena & Reggio Emilia, DISMI, Reggio Emilia, Italy

[3] Univ Modena & Reggio Emilia, EN&TECH, Reggio Emilia, Italy

来源：

MICROELECTRONICS RELIABILITY | 2019年 / 100卷

关键词：

Buffer layers - III-V semiconductors - Gallium nitride - Aluminum gallium nitride - Electron injection;

D O I：

10.1016/j.microrel.2019.06.066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We analyze the off-state, three-terminal, lateral breakdown in AlGaN/GaN HEMTs for power switching applications by comparing two-dimensional numerical device simulations with experimental data from device structures with different gate-to-drain spacing and with either undoped or Carbon-doped GaN buffer layer. Our simulations reproduce the different breakdown-voltage dependence on the gate-drain-spacing exhibited by the two types of device and attribute the breakdown to: i) a combination of gate electron injection and source-drain punch-through in the undoped HEMTs; and ii) avalanche generation triggered by gate electron injection in the C-doped HEMTs.

引用

页数：5

共 50 条

[21] Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation
Marino, F. A.
Bisi, D.
Meneghini, M.
Verzellesi, G.
Zanoni, E.
Van Hove, M.
You, S.
Decoutere, S.
Marcon, D.
Stoffels, S.
Ronchi, N.
Meneghesso, G.
[J]. SOLID-STATE ELECTRONICS, 2015, 113 : 9 - 14
[22] Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs
Cioni, Marcello
Zagni, Nicolo
Iucolano, Ferdinando
Moschetti, Maurizio
Verzellesi, Giovanni
Chini, Alessandro
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (10) : 4862 - 4868
[23] Methodology for predicting off-state reliability in GaN power transistors
Whitman, Charles S.
[J]. MICROELECTRONICS RELIABILITY, 2014, 54 (02) : 354 - 359
[24] Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors
Kuzmik, J.
Pozzovivo, G.
Carlin, J. -F.
Gonschorek, M.
Feltin, E.
Grandjean, N.
Strasser, G.
Pogany, D.
Gornik, E.
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S925 - S928
[25] Off-state and on-state breakdown of GaAs MESFET, PHEMT and power PHEMT
Ismail, N
Malbert, N
Labat, N
Touboull, A
Muraro, JL
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3, 2006, 3 (03): : 499 - +
[26] Source Injection Induced Off-State Breakdown and Its Improvement by Enhanced Back Barrier with Fluorine Ion Implantation in AlGaN/GaN HEMTs
Wang, Maojun
Chen, Kevin J.
[J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 149 - 152
[27] Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs
Cheng, Yan
Wang, Yuru
Feng, Sirui
Zheng, Zheyang
Chen, Tao
Lyu, Gang
Ng, Yat Hon
Chen, Kevin J.
[J]. APPLIED PHYSICS LETTERS, 2021, 118 (16)
[28] Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions
Prasannanjaneyulu, Bhavana
Mishra, Sukalpa
Karmalkar, Shreepad
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2019, 19 (04) : 766 - 773
[29] Improving the off-state characteristics and dynamic on-resistance of AlInN/AlN/GaN HEMTs with a GaN cap layer
Lee, Geng-Yen
Tu, Po-Tsung
Chyi, Jen-Inn
[J]. APPLIED PHYSICS EXPRESS, 2015, 8 (06)
[30] Off-state breakdown walkout in high-power PHEMT's
Chou, YC
Li, GP
Yu, KK
Wu, CS
Chu, P
Hou, LD
Midford, TA
[J]. GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 1996, : 42 - 45

← 1 2 3 4 5 →