Adhesive Ion-Gel as Gate Insulator of Electrolyte-Gated Transistors

In this study, a facile method to fabricate a cohesive ion-gel based gate insulator for electrolyte-gated transistors is introduced. The adhesive and flexible ion-gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion-gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm(-1) at room temperature. When used as a gate insulator in electrolyte-gated transistors (EGTs), an on/off current ratio of 2.24x10(4) and a subthreshold swing of 117 mV dec(-1) can be achieved. This performance is roughly equivalent to that of ink drop-casted ion-gels in electrolyte-gated transistors, indicating that the film-attachment method might represent a valuable alternative to ink drop-casting for the fabrication of gate insulators.