Self-assembly of GaAs holed nanostructures by droplet epitaxy

被引：53
|
作者：
Wang, ZMM [1 ]
Holmes, K [1 ]
Shultz, JL [1 ]
Salamo, GJ [1 ]
机构：
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 08期
关键词：
D O I：
10.1002/pssa.200510031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on Ga nano-droplets on GaAs(100) that are not stable under arsenic flux. Spontaneous evolution in shape leads to many interesting GaAs nanostructures. GaAs nanocrystals shaped like lighted candles and square-holed round coins are observed under different growth conditions. The underlying physics of the formation of these interesting nano-structures can be understood in terms of GaAs growth under a uniform arsenic flux and a non-uniform Ga supply from the Ga nano-droplets. These novel shaped GaAs nanostructures, in an AlGaAs matrix, offer promising applications in optoelectronics. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：R85 / R87
页数：3
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