Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

被引：3

作者：

Wang, Lei ^{[1
]}

Liu, Haiyun ^{[2
]}

Liu, Xing ^{[1
]}

机构：

[1] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Peoples R China

[2] Hohai Univ, Coll Comp & Informat, Nanjing 211100, Peoples R China

来源：

MICROMACHINES | 2022年 / 13卷 / 05期

关键词：

electron irradiation; polycrystalline silicon; grain boundary evolution; GAMMA; COMPENSATION; RESISTANCE;

D O I：

10.3390/mi13050743

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A specimen observed with a transmission electron microscope (TEM) was processed by focused ion beam (FIB) from a surface-micromachined polycrystalline silicon MEMS structure. Electron irradiation and in situ observation were performed on a selected grain boundary in the specimen. The grain boundary was observed and located by using lattice-oriented selective TEM photography. An evolution progress of amorphization of small silicon grain within the grain boundary and recrystallization of amorphous silicon were observed. A silicon grain turned into several smaller bar grains within the grain boundary. The mechanism of grain-boundary evolution inducing a change of conductivity of polycrystalline silicon has been revealed. The conductivity of polycrystalline silicon influenced by electron irradiation could be attributed to the change of grain boundary.

引用

页数：10

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