Nitrogen-Doped Single-Walled Carbon Nanotubes by Floating-Catalyst CVD Process

被引:0
|
作者
Thurakitseree, Theerapol [1 ]
Rattanachata, Arunothai [2 ]
Nakajima, Hideki [2 ]
Phothiphiphit, Somruthai [3 ]
Kuimalee, Surasak [4 ]
Suknet, Pimpun [3 ]
机构
[1] Maejo Univ, Program Appl Phys, Chiang Mai 50290, Thailand
[2] Synchrotron Light Res Inst Publ Org, 111 Univ Ave, Nakhon Ratchasi 30000, Thailand
[3] Natl Sci & Technol Dev Agcy NSTDA, NCTC, 111 Thailand, Sci Pk, Phahonyothin Rd, Pathum Thani 12120, Thailand
[4] Maejo Univ, Fac Sci, Ind Chem Innovat Program, Chiang Mai 50290, Thailand
关键词
Single-walled carbon nanotube; Nitrogen-doped SWCNTs; Nitrogen configuration; Floating-catalyst CVD; n-doping; HIGH-QUALITY; FILMS; FIBERS; GROWTH; ENERGY; ELECTRON; RAMAN;
D O I
10.1016/j.chemphys.2023.112090
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Due to the properties of single-walled carbon nanotube (SWCNT), thin film SWCNTs have been used for many versatile applications. Direct synthesis of the nanotube films with desired electronic structures without prereq-uisite of post treatment process then becomes one important step. Here, we present the synthesis of nitrogen-doped SWCNTs by floating-catalyst chemical vapor deposition process. With low nitrogen level incorporated into the sp2 carbon network, substitutional and pyridinic nitrogens become predominance. The electronic structure of N-doped SWCNT film could be changed into n-type doping. The localized structures of carbon and nitrogen bonding environments were also revealed by x-ray absorption spectroscopy. The formation of p-n junction was also obtained from the I-V characteristic of N-doped SWCNT heterojunction diode revealing n-type behavior of the sample.
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页数:6
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